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2SB1316

Rohm
Part Number 2SB1316
Manufacturer Rohm
Description Power Transistor
Published Mar 22, 2005
Detailed Description Transistors Power Transistor (−100V , −2A) 2SB1316 2SB1316 zFeatures 1) Darlington connection for high DC current gain...
Datasheet PDF File 2SB1316 PDF File

2SB1316
2SB1316

Overview
Transistors Power Transistor (−100V , −2A) 2SB1316 2SB1316 zFeatures 1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO −100 −100 Emitter-base voltage Collector current Collector 2SB1580 power dissipation 2SB1316 VEBO IC PC −8 −2 −3 2 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.
7 mm ceramic board.
Unit V V V A(DC) A(Pulse) ∗1 W ∗2 W(Tc=25°C) °C °C zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2SB1580 MPT3 1k to 10k BN∗ T100 1000 2SB1316 CPT3 1k to 10k − TL 2500 zEquivalent circuit C B R1 R2 E R1 3.
5kΩ R2 300Ω B : Base C : Collector E : Emitter zE...


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