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K9T1G08U0M

Samsung semiconductor
Part Number K9T1G08U0M
Manufacturer Samsung semiconductor
Description 128M x 8 Bits NAND Flash Memory
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory FLASH MEMORY Preliminary Revision Hist...
Datasheet PDF File K9T1G08U0M PDF File

K9T1G08U0M
K9T1G08U0M

Overview
www.
DataSheet4U.
net K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory FLASH MEMORY Preliminary Revision History Revision No.
History 0.
0 0.
1 0.
2 0.
3 0.
4 0.
5 Draft Date Aug.
7th 2003 Oct.
20th 2003 Mar.
9th 2004 Apr.
24th 2004 May.
24th 2004 Oct.
25th 2004 Remark Advanced Preliminary Preliminary Preliminary Preliminary Preliminary Initial issue.
tR is changed.
[Old : 12µs(Max.
), New :15µs(Max.
)] CE must be held low during tR added.
1.
Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1.
PKG(TSOP1, WSOP1) Dimension Change 1.
Technical note is changed 2.
Note1 of Program/Erase characteristics is added Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.
samsung.
com/Products/Semiconductor/ The attached datasheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions about device.
If you have any questions, please contact the SAMSUNG branch office near you.
1 www.
DataSheet4U.
net K9T1G08U0M FLASH MEMORY Preliminary 128M x 8 Bits NAND Flash Memory PRODUCT LIST Part Number K9T1G08U0M-Y,P K9T1G08U0M-V,F Vcc Range 2.
7V ~ 3.
6V Organization X8 PKG Type TSOP1 WSOP1 FEATURES • Voltage Supply : 2.
7V ~ 3.
6V • Organization - Memory Cell Array : (128M + 4,096K)bits x 8bits - Data Register : (512 + 16)bits x 8bits • Automatic Program and Erase - Page Program : (512 + 16)bits x 8bits - Block Erase : (16K + 512)Bytes • Page Read Operation - Page Size : (512 + 16)Bytes - Random Access : 15µs(Max.
) - Serial Page Access : 50ns(Min.
) • Fast Write Cycle Time - Program time : 200µs(Typ.
) - Block Erase Time : 2ms(Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Reg...


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