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IPD053N08N3G

Infineon Technologies
Part Number IPD053N08N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Aug 30, 2011
Detailed Description IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product ...
Datasheet PDF File IPD053N08N3G PDF File

IPD053N08N3G
IPD053N08N3G

Overview
IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.
3 90 • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 V mW A Type IPD053N08N3 G Package Marking PG-TO252-3 053N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 90 90 360 190 ±20 1...


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