DatasheetsPDF.com

IPD053N06N3G

Infineon Technologies
Part Number IPD053N06N3G
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching an...
Datasheet PDF File IPD053N06N3G PDF File

IPD053N06N3G
IPD053N06N3G

Overview
www.
DataSheet4U.
net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD053N06N3 G Product Summary V DS R DS(on),max ID 60 5.
3 90 V mΩ A Package Marking PG-TO252-3 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C Value 90 78 360 68 ±20 Unit A Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage 1) 2) 3) 4) I D,pulse E AS V GS T C=25 °C I D=90 A, R GS=25 Ω mJ V J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.
3 K/W the chip is able to carry 109 A.
See figure 3 for more detailed information See figure 13 for more detailed ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)