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IPU050N03LG

Infineon Technologies
Part Number IPU050N03LG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Aug 30, 2011
Detailed Description Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • ...
Datasheet PDF File IPU050N03LG PDF File

IPU050N03LG
IPU050N03LG

Overview
Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant IPD050N03L G IPS050N03L G IPF050N03L G IPU050N03L G Product Summary VDS RDS(on),max ID 30 V 5 mW 50 A Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Package Marking PG-TO252-3-11 050N03L PG-TO252-3-23 050N03L PG-TO251-3-11 050N03L PG-TO251-3-21 050N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev.
2.
0 I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5...


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