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H50N03E

Hi-Sincerity Mocroelectronics
Part Number H50N03E
Manufacturer Hi-Sincerity Mocroelectronics
Description N-Channel MOSFET
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : ...
Datasheet PDF File H50N03E PDF File

H50N03E
H50N03E

Overview
www.
DataSheet4U.
net HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200519 Issued Date : 2005.
12.
01 Revised Date : 2005.
12.
16 Page No.
: 1/5 H50N03E N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03E Pin Assignment Tab Features • RDS(on)=11mΩ@VGS=10V, ID=30A • RDS(on)=18mΩ@VGS=4.
5V, ID=30A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation @ TC=25oC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.
14mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)*2 *1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board Symbol VDS VGS ID IDM PD TJ,Tstg EAS RθJC RθJA Value 25 ±20 50 200 70 -55 to 150 300 2.
1 55 Units V V A A W o C mJ O O C/W C/W Switching Test Circuit VDD Switching Waveforms ton td(on) toff tr td(off) 90% tf 90 % VIN VGEN RG G D VOUT Output, VOUT 10% 10% Inverted 90% 50% 50% S Input, VIN 10% Pulse Width H50N03E HSMC Product Specification www.
DataSheet4U.
net HI-SINCERITY MICROELECTRONICS CORP.
ELectrical Characteristics Characteristic Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance So...


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