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SUD10P06-280L

Vishay Siliconix
Part Number SUD10P06-280L
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net SUD/SUU10P06-280L Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY...
Datasheet PDF File SUD10P06-280L PDF File

SUD10P06-280L
SUD10P06-280L

Overview
www.
DataSheet4U.
net SUD/SUU10P06-280L Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.
170 @ VGS = –10 V 0.
280 @ VGS = –4.
5 V ID (A) –10 –8 TO-251 S TO-252 G Drain Connected to Tab G D S G D S and DRAIN-TAB Top View Order Number: SUD10P06-280L D P-Channel MOSFET Top View Order Number: SUU10P06-280L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAR EAR PD TJ, Tstg Limit "20 –10 –7 –20 –10 –10 5 37 2a –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter FR4 Board Mount Junction-to-Ambienta Junction-to-Case Notes a.
Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 70780 S-20349—Rev.
F, 18-Apr-02 www.
vishay.
com Free Air RthJA RthJC Symbol Typical 60 120 3.
7 Maximum 70 140 4.
0 Unit _C/W 2-1 www.
DataSheet4U.
net SUD/SUU10P06-280L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V, TJ = 125_C VDS = –60 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = –5 V, VGS = –10 V VGS = –10 V, ID = –5 A VGS = –10 V, ID = –5 A, TJ = 125_C Drain-Source On-State Resistanceb rDS(on) VGS = –10 V, ID = –5 A, TJ = 175_C VGS = –4.
5 V, ID = –2 A Forward Transconductanceb gfs VDS = –15 V, ID = –5 A 0.
210 6 –10 0.
130 0.
170 0.
31 0.
375 0.
280 S W –60 V –1.
0 –2.
0 –3.
0 "100 –...


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