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2SB1072L

Hitachi Semiconductor
Part Number 2SB1072L
Manufacturer Hitachi Semiconductor
Description PNP Transistor
Published Mar 22, 2005
Detailed Description 2SB1072(L), 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 4 1 2 3 12...
Datasheet PDF File 2SB1072L PDF File

2SB1072L
2SB1072L


Overview
2SB1072(L), 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 4 1 2 3 12 1.
Base 2.
Collector 3.
Emitter 4.
Collector 2, 4 1 ID 3 kΩ (Typ) 0.
4 kΩ (Typ) 3 S Type 3 L Type 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current C to E diode forward current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VCBO VCEO VEBO IC ID* 1 Rating –100 –80 –7 –4 4 –8 20 150 –55 to +150 Unit V V V A A A W °C °C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta = 25°C) Item Symbol Min –80 –7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.
5 1.
5 1.
0 Max — — –100 –10 20000 –1.
5 –3.
0 –2.
0 –3.
5 3.
0 — — — V V V V V µs µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –80 V, IE = 0 VCE = –60 V, RBE = ∞ VCE = –3 V, IC = –2 A*1 I C = –2 A, IB = –4 mA*1 I C = –4 A, IB = –40 mA*1 I C = –2 A, IB = –4 mA*1 I C = –4 A, IB = –40 mA*1 I D = 4 A*1 I C = –2 A, IB1 = –IB2 = –4 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t stg tf 2 2SB1072(L), 2SB1072(S) Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 20 10 Collector current IC (A) iC(peak) 1 µs s 0 µ 1 ms 10 Area of Safe Operation 20 –3 IC(max) PW –1.
0 DC =1 0m (T C 10 –0.
3 –0.
1 –0.
03 Ta = 25°C 1 Shot Pulse s ) =2 C 5° 0 50 100 Case temperature TC (°C) 150 –1 –2 –5 –10 –20 –50 –100 Collector to emitter voltage VCE (V) Typical Output Characteristics –5 PC = 20 W DC current transfer ratio hFE 0 –1.
.
9 –00.
8...


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