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2SB1071

Panasonic Semiconductor
Part Number 2SB1071
Manufacturer Panasonic Semiconductor
Description PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching 0.7±0.1 Unit: mm 10.0±...
Datasheet PDF File 2SB1071 PDF File

2SB1071
2SB1071


Overview
Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching 0.
7±0.
1 Unit: mm 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 4.
2±0.
2 2.
7±0.
2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.
7±0.
3 7.
5±0.
2 φ 3.
1±0.
1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1071 2SB1071A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 2 150 −55 to +150 °C °C V A A W 1 2 3 Unit V Solder Dip (4.
0) 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 14.
0±0.
5 0.
8±0.
1 2.
54±0.
3 Collector-emitter voltage 2SB1071 (Base open) 2SB1071A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V 5.
08±0.
5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB1071 2SB1071A 2SB1071 2SB1071A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.
1 A VCE = −2 V, IC = −1 A IC = −2 A, IB = − 0.
1 A IC = −2 A, IB = − 0.
1 A VCE = −5 V, IC = − 0.
5 A, f = 10 MHz IC = −2 A, IB1 = − 0.
2 A, IB2 = 0.
2 A VCC = −20 V 150 0.
3 0.
4 0.
1 45 60 260 − 0.
5 −1.
5 V V MHz µs µs µs Symbol VCEO Conditions IC = −10 mA, IB = 0 Min −20 −40 −50 −50 −50 µA  µA Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE2 R 60 to 120 Q 90 to 180 P 130 to 260 Publication date: February 2003 SJD00041AED 1 2SB1...


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