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2SB1011

Panasonic Semiconductor
Part Number 2SB1011
Manufacturer Panasonic Semiconductor
Description Silicon PNP triple diffusion planar type Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 ...
Datasheet PDF File 2SB1011 PDF File

2SB1011
2SB1011

Overview
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.
0+0.
5 –0.
1 Unit: mm 3.
2±0.
2 ■ Features • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) φ 3.
16±0.
1 3.
8±0.
3 11.
0±0.
5 1.
9±0.
1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −400 −400 −5 −100 −200 1.
2 150 −55 to +150 Unit V V V 1 2 3 0.
75±0.
1 4.
6±0.
2 0.
5±0.
1 0.
5±0.
1 2.
3±0.
2 1.
76±0.
1 mA mA W °C °C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Forwar...


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