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IPD640N06LG

Infineon Technologies
Part Number IPD640N06LG
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enh...
Datasheet PDF File IPD640N06LG PDF File

IPD640N06LG
IPD640N06LG

Overview
IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 64 18 V mΩ A Type IPD640N06L G Type Package IPD640N06L G Marking PG-TO252-3 640N06L PG-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 1...


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