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IPB60R600CP

Infineon Technologies
Part Number IPB60R600CP
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description IPB60R600CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv...
Datasheet PDF File IPB60R600CP PDF File

IPB60R600CP
IPB60R600CP

Overview
IPB60R600CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.
6 21 V Ω nC PG-TO263 CoolMOS CP is designed for: • Hard switching SMPS topologies Type IPB60R600CP Package PG-TO263 Marking 6R600P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.
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480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=2.
2 A, V DD=50 V I D=2.
2 A, V DD=50 V Value 6.
1 3.
8 15 144 0.
2 2.
2 50 ±20 ±30 60 -55 .
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150 W °C A V/ns V mJ Unit A www.
DataSheet4U.
net Rev.
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0 page 1 2008-02-15 IPB60R600CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case R thJC R thJA leaded SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=220µA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=3.
3 A, T j=25 °C V GS=10 V, I D=3.
3 A, T j=150 °C Gate resista...


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