Power Transistor - Infineon Technologies
Description
IPB60R099CP
CoolMOSTM Power Transistor
Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.
099 60 V Ω nC
PG-TO263
CoolMOS CP is specially designed for: • Hard switching SMPS topologies for Server and Telecom
Type IPB60R099CP
Package PG-TO263
Ordering Code SP000088490
Marking 6R099
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.
.
.
480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 31 19 93 800 1.
2 11 50 ±20 ±30 255 -55 .
.
.
150 W °C A V/ns V mJ Unit A
www.
DataSheet4U.
net
Rev.
2.
0
page 1
2006-06-19
IPB60R099CP
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current
2)
Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min.
T C=25 °C
Value 18 93 15 Values typ.
max.
Unit A
Reverse diode d v /dt 4) Parameter
V/ns Unit
Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL 1 0.
5 62 K/W
-
35 -
260 °C
Soldering temperature, reflowsoldering
T sold
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=1.
2 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, ...
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