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IPA093N06N3

Infineon Technologies
Part Number IPA093N06N3
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description Type OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology fo...
Datasheet PDF File IPA093N06N3 PDF File

IPA093N06N3
IPA093N06N3

Overview
Type OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPA093N06N3 G IPA093N06N3 G Product Summary VDS RDS(on),max ID 60 V 9.
3 mW 43 A Package Marking PG-TO220 FP 093N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=50 A, R GS=...


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