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T30N60BD1

IXYS Corporation
Part Number T30N60BD1
Manufacturer IXYS Corporation
Description IXST30N60BD1
Published Jul 19, 2011
Detailed Description High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability ...
Datasheet PDF File T30N60BD1 PDF File

T30N60BD1
T30N60BD1

Overview
High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.
0 V = 140 ns www.
DataSheet4U.
com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.
8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 .
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+150 150 -55 .
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+150 V V V V A A A A ms W °C °C °C °C g g TO-247AD (IXSH) VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md G C E TO-268 (D3) (...


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