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2SD1841

Part Number	2SD1841
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jul 19, 2011
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Current ...
Datasheet	2SD1841 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB1231 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, relay drivers, converters and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB Base Current-Continuous Collector Power Di...

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