POWER TRANSISTOR - Inchange Semiconductor
Description
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A
·Good Linearity of hFE ·Complement to Type 2SC3944/A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency driver and high power amplifi-
cation, is optimum for the driver-stage of a 60W to 100 W output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
2SA1535
-150
VCBO
Collector-Base Voltage
V
2SA1535A
-180
2SA1535
-150
VCEO
Collector-Emitter Voltage
V
2SA1535A
-180
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IC
Collector Current-Peak
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-1.
5
A
15 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1535/A
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isc Silicon PNP Power Transistors
2SA1535/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter Breakdown Voltage
2SA1535 2SA1535A
IC= -50mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.
5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.
5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -150V ; IE= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -10V
hFE-2
DC Current Gain
IC= -0.
5A ; VCE= -5V
MIN TYP.
MAX UNIT
-150 V
-180
-5
V
-2.
0 V
-2.
0 V
-10 μA
90
330
50
hFE-1 Classifications
Q
R
S
90-155 130-220 185-330
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for ...
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