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2SA1860

Part Number	2SA1860
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Goo...
Datasheet	2SA1860 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4886 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -14 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ i...

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