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MJ11013

Part Number	MJ11013
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Datasheet	MJ11013 PDF File

Features

isc Silicon PNP Darlington Power Transistor

MJ11013

DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -90V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A ·Co...

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