DatasheetsPDF.com

2SA1096A

Part Number	2SA1096A
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1096A DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min) ...
Datasheet	2SA1096A PDF File

Overview

isc Silicon PNP Power Transistor 2SA1096A DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.
2 W 5 150 ℃ Tstg Sto...

Similar Datasheet

2SA109 (2SAxxx) Transistors - Toshiba
2SA1090 (2SAxxx) Transistors - Toshiba
2SA1091 TRANSISTOR - Toshiba Semiconductor
2SA1091 Silicon PNP transistor - BLUE ROCKET ELECTRONICS
2SA1091 SILICON PNP TRANSISTOR - LZG
2SA1093 Silicon PNP Transistor - Toshiba
2SA1093 SILICON POWER TRANSISTOR - SavantIC
2SA1093 POWER TRANSISTOR - Inchange Semiconductor
2SA1094 Silicon PNP Transistor - Toshiba
2SA1094 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)