POWER TRANSISTOR - Inchange Semiconductor
Description
isc Silicon PNP Power Transistor
2SA1249
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3117 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV sound output, converters, inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.
5
A
ICM
Collector Current-Peak
Total Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-2.
5
A
1 W
10
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
com
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -10μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.
5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.
5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.
1A; VCE= -5V
hFE-2
DC Current Gain
IC= -10mA; VCE= -5V
hFE-1 Classifications
R
S
T
100-200 140-280 200-400
2SA1249
MIN TYP.
MAX UNIT
-160
V
-180
V
-6
V
-0.
5
V
-1.
2
V
-1.
0 μA
-1.
0 μA
100
400
90
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equ...
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