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2SA1757

Part Number	2SA1757
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High...
Datasheet	2SA1757 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)= -0.
3V(Max)@ (IC= -3A, IB= -0.
15A) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC...

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