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2SA1758

Part Number	2SA1758
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1758 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC C...
Datasheet	2SA1758 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1758 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= -2V, IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -0.
3V(Max)@ (IC= -6A, IB= -0.
3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 30 W 150 ℃ Tstg Storage...

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