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2SA1789

Part Number	2SA1789
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1789 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) ·G...
Datasheet	2SA1789 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1789 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
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