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2SA1869

Part Number	2SA1869
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good...
Datasheet	2SA1869 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.
3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： ...

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