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2SA1887

Part Number	2SA1887
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1887 DESCRIPTION ·Low Collector Saturation Voltage ·Large C...
Datasheet	2SA1887 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1887 DESCRIPTION ·Low Collector Saturation Voltage ·Large Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal...

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