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2SA1988

Part Number	2SA1988
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Voltage ·TO-3P package ·100% avalanche tested ·Minimum Lot-to-Lot var...
Datasheet	2SA1988 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Voltage ·TO-3P package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SA1988 is PNP silicon power transistor that designed for audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -7 A 20 W 100 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA19...

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