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L74VHC1G07

LRC

Noninverting Buffer - LRC


L74VHC1G07
L74VHC1G07

PDF File L74VHC1G07 PDF File



Description
LESHAN RADIO COMPANY, LTD.
Noninverting Buffer with Open Drain Output L74VHC1G07 The L74VHC1G07 is an advanced high speed CMOS buffer with open drain output fabricated with silicon gate CMOS technology.
It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer and an open drain output which provides the capability to set the output switching level.
This allows the L74VHC1G07 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply.
The L74VHC1G07 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t PD = 3.
8 ns (Typ) at V CC = 5 V • Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FET = 105; Equivalent Gate = 26 MARKING DIAGRAMS 5 4 1 2 3 V7d SC–88A / SOT–353/SC–70 DF SUFFIX Pin 1 d = Date Code 5 4 Figure 1.
Pinout (Top View) 1 2 3 V7d Figure 2.
Logic Symbol Pin 1 d = Date Code TSOP–5/SOT–23/SC–59 DT SUFFIX FUNCTION TABLE PIN ASSIGNMENT 1 NC 2 3 4 5 IN A GND OUT Y V CC Inputs A L H Output Y L Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5of this data sheet.
www.
DataSheet4U.
com 1/6 LESHAN RADIO COMPANY, LTD.
L74VHC1G07 MAXIMUM RATINGS Symbol V CC V IN V OUT I IK I OK I OUT I CC PD θ JA TL TJ T stg V ESD Parameter DC Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current V OUT < GND; V OUT > V CC DC Output Current, per Pin DC Supply Current, V CC and GND Power dissipation in still air SC–88A, TSOP–5 Thermal resistance SC–88A, TSOP–5 Lead Temperature, 1 mm from Case for 10 s Junction Temperature Under Bias Storage temperature ESD Withstand Voltage...



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