PN4119 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix PN4119
The PN4119 is an Ultra-High Input Impedance N-Channel JFET
The PN4119 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier. FEATURES DIRECT REPLACEMENT FOR SILICONIX PN4119 LOW POWER MINIMUM CIRCUIT LOADING ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain or Gate to Source (Note 2)
IDSS<90 µA IGSS<10 pA
PN4119 Benefits:
Insignificant Signal Loss/Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals
‐65°C to +175°C ‐55°C to +150°C 300mW 50mA ‐40V
PN4119 Applications:
High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment
PN4119 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐40 ‐‐ ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐2 ‐‐ ‐6 V VDS = 10V, ID = 1nA IDSS Gate to Source Saturation Current 0. 20 ‐‐ 0. 60 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current ‐‐ ‐‐ ‐10 pA VGS = ‐20V, VDS = 0V ‐‐ ‐‐ ‐25 VGS = ‐20V, VDS = 0V, 150°C gfs Forward Transconductance(Note 3) 100 ‐‐ 330 µmho VDS = 10V, VGS = 0V, f = 1kHz gos Output Conductance ‐‐ ‐‐ 10 Ciss Input Capacitance ‐‐ ‐‐ 3 pF VDS = 10V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ ‐‐ 1. 5 1 . Absolute maximum ratings are limiting values above which PN4119 serviceability may be impaired. NOTES 2. Due to symm...
PN4119 PDF File
