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903BDG

Niko-Sem
Part Number 903BDG
Manufacturer Niko-Sem
Published Jun 13, 2011
Description P0903BDG
Detailed Description NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SU...
Datasheet PDF File 903BDG PDF File

903BDG
903BDG


Overview
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.
5m ID 50A 1.
GATE 2.
DRAIN 3.
SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 www.
DataSheet4U.
com SYMBOL VGS LIMITS ±20 50 35 200 40 250 8.
6 50 30 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAR A L = 0.
1mH L = 0.
05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 2.
5 62.
5 UNITS °C / W 0.
6 Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C 25 1 1.
6 3 ±250 25 250 nA µA V LIMITS UNIT MIN TYP MAX 1 SEP-24-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free 50 11 7.
5 32 16 9.
5 A m S On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 4.
5V, ID = 20A VGS = 10V, ID = 25A VDS = 10V, ID = 25A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 Ciss Coss Crss Qg Qgs Qgd 2 1200 1800 VGS = 0V, VDS = 15V, f = 1MHz 600 350 25 VDS = 10V, VGS = 10V, ID = 25A 15 10 6 VDS = 15V, RL = 1 ID ≅ 50A, VGS = 10V, RGEN = 24 120...


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