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LS841

Micross
Part Number LS841
Manufacturer Micross
Description Low Noise
Published Jun 13, 2011
Detailed Description LS841 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS841 is a hig...
Datasheet PDF File LS841 PDF File

LS841
LS841


Overview
LS841 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS841 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications.
The LS841 features a 10mV offset and 10-µV/°C drift.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES  LOW DRIFT  | V GS1‐2 / T| ≤10µV/°C  LOW LEAKAGE  IG = 10pA TYP.
  LOW NOISE  en = 8nV/√Hz TYP.
  LOW OFFSET VOLTAGE  | V GS1‐2| ≤10mV  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  60V  ‐VDSO  Drain to Source Voltage  60V  ‐IG(f)  Gate Forward Current  50mA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 400mW @ +125°C    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.
  DRIFT VS.
  10  µV/°C  VDG=20V, ID=200µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.
  OFFSET VOLTAGE  10  mV  VDG=20V, ID=200µA  TYP.
  60  ‐‐    ‐‐  ‐‐  0.
6    2  1    2  ‐‐    10  ‐‐  5  ‐‐    ‐‐  0.
1  0.
01    100  75    ‐‐  ‐‐  ‐‐    4  1.
2  0.
1  MAX.
  ‐‐  ‐‐    4000  1000  3    5  5    4.
5  4    50  50  ‐‐  100    10  1  0.
1    ‐‐  ‐‐    0.
5  10  15  10  5  ‐‐  UNITS  V  V    µmho  µmho  %    mA  %    V  V    pA  nA  pA  pA    µmho  µmho  µmho    dB  CONDITIONS  VDS = 0                  ID=1nA        I G= 1nA               ID= 0               IS= 0    VDG= 20V         VGS= 0V      f = 1kHz       VDG= 20V         ID= 200µA          VDG= 20V              VGS= 0V      VDS= 20V               ID= 1nA                VDS=20V                 ID=20...


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