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LS830

Micross
Part Number LS830
Manufacturer Micross
Description Low Leakage
Published Jun 13, 2011
Detailed Description LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a hig...
Datasheet PDF File LS830 PDF File

LS830
LS830


Overview
LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications.
The LS830 features a 5mV offset and 10-µV/°C drift.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES  ULTRA LOW DRIFT  | V GS1‐2 / T| ≤ 5µV/°C TYP.
  ULTRA LOW LEAKGE  IG = 80fA TYP.
  LOW NOISE  en = 70nV/√Hz TYP.
  LOW CAPACITANCE  CISS = 3pF MAX.
  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  40V  ‐VDSO  Drain to Source Voltage  40V  ‐IG(f)  Gate Forward Current  10mA  ‐IG  Gate Reverse Current  10µA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 40mW @ +125°C    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.
  DRIFT VS.
  5  µV/°C  VDG=10V, ID=30µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.
  OFFSET VOLTAGE  25  mV  VDG=10V, ID=30µA  TYP.
  60  ‐‐    300  100  0.
6    ‐‐  1    2  ‐‐    ‐‐  ‐‐  ‐‐  5  1    ‐‐  ‐‐    90  90    ‐‐  20    ‐‐  ‐‐  ‐‐  MAX.
  ‐‐  ‐‐    500  200  3    10  5    4.
5  4    0.
1  0.
1  0.
2  0.
5  ‐‐    5  0.
5    ‐‐  ‐‐    1  70    3  1.
5  0.
1  UNITS  V  V    µmho  µmho  %    mA  %    V  V    pA  nA  pA  nA  pA    µmho  µmho    dB  CONDITIONS  VDS = 0                  ID=1nA        I G= 1nA               ID= 0               IS= 0    VDG= 10V         VGS= 0V      f = 1kHz       VDG= 10V         ID= 30µA    f = 1kHz      VDG= 10V              VGS= 0V      VDS= 10V               ID= 1nA      ...


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