LS5912C MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5912C
The LS5912C are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The LS5912C is a direct replacement for discontinued Siliconix and National LS5912C. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C LOW NOISE (10KHz) en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source MIN ‐‐ ‐‐ 0. 95 ‐‐ TYP ‐‐ ‐‐ ‐‐ MAX 40 40 1 UNITS mV µV/°C % ‐65°C to +150°C ‐55°C to +135°C
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500mW 50mA ‐25V ‐25V CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V
LS5912C Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio |IG1 – IG2 | Differential Gate Current gfs1 / gfs2
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‐‐ 20 1 nA % Forward Transconductance Ratio2 0. 95 ‐‐ ‐‐ Common Mode Rejection Ratio...
LS5912C PDF File
