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LS5912

Micross
Part Number LS5912
Manufacturer Micross
Description High Gain
Published Jun 13, 2011
Detailed Description LS5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 The LS5912 are m...
Datasheet PDF File LS5912 PDF File

LS5912
LS5912



Overview
LS5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 The LS5912 are monolithic dual JFETs.
The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching.
These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications.
The LS5912 is a direct replacement for discontinued Siliconix and National 2N5912.
The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES  Improved Direct Replacement for SILICONIX & NATIONAL 2N5912  LOW NOISE (10KHz)  en~ 4nV/√Hz  HIGH TRANSCONDUCTANCE (100MHz)  gfs ≥ 4000µS  ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (Total)  Maximum Currents  Gate Current  Maximum Voltages  Gate to Drain  Gate to Source        MIN  ‐‐  ‐‐  0.
95  ‐‐  TYP  ‐‐  ‐‐  ‐‐  MAX  15  40  1  UNITS  mV  µV/°C  %  ‐65°C to +150°C  ‐55°C to +135°C  www.
DataSheet4U.
com 500mW  50mA  ‐25V  ‐25V        CONDITIONS  VDG = 10V, ID = 5mA            VDG = 10V, ID = 5mA       TA = ‐55°C to +125°C  VDS = 10V, VGS = 0V  LS5912 Applications: ƒ Wideband Differential Amps ƒ High-Speed,Temp-Compensated SingleEnded Input Amps ƒ High-Speed Comparators ƒ Impedance Converters and vibrations detectors.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VGS1 – VGS2 |  Differential Gate to Source Cutoff Voltage  ∆|VGS1 – VGS2 | / ∆T  Differential Gate to Source Cutoff     Voltage Change with Temperature  IDSS1  / IDSS2  Gate to Source Saturation Current Ratio    |IG1 – IG2 |  Differential Gate Current  gfs1 / gfs2    CMRR  Click To Buy ‐‐  20  1  nA  %  Forward Transconductance Ratio2  0.
95  ‐‐  ‐‐  Common Mode Rejection Ratio  85  ‐...



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