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LS5909

Part Number	LS5909
Manufacturer	Micross
Description	Low Leakage
Published	Jun 13, 2011
Detailed Description	LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuri...
Datasheet	LS5909 PDF File

Overview

LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted) | VGS1‐2 / T| = 5µV/°C TYP.
IG = 150fA TYP.
Vp = 2V TYP.
LS5909 Benefits: Tight Tracking Good matching Ultra Low Leakage Low Drift Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA ‐IG Gate Reverse Current 10µA Maximum Power Dissipation Device Dissipation @ Free Air – Total                 40mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | VGS1‐2 / T| max.
DRIFT VS.
40 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max.
OFFSET VOLTAGE 15 mV VDG=10V, ID=30µA TYP.
60 ‐‐ 300 100 1 400 2 2 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1 ‐‐ 0.
1 0.
01 90 90 ‐‐ 20 ‐‐ ‐‐ ‐‐ MAX.
‐‐ ‐‐ 500 200 5 1000 5 4.
5 4 1 1 2 5 ‐‐ 5 0.
1 0.
1 ‐‐ ‐‐ 1 70 3 1.
5 0.
1 UNITS V V µmho µmho % µA % V V pA nA pA nA pA µmho CONDITIONS VDS = 0                  ID=1nA       IG= 1nA               ID= 0               IS= 0 VDG= 10V         VGS= 0V      f = 1kHz      VDG= 10V         ID= 30µA      f = 1kHz VDG= 10V              VGS= 0V VDS= 10V               ID= 1nA               VDS=10V                 ID=30µA VDG=...

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