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LS4351

Micross
Part Number LS4351
Manufacturer Micross
Description Amplifier/Switch
Published Jun 13, 2011
Detailed Description LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel ...
Datasheet PDF File LS4351 PDF File

LS4351
LS4351


Overview
LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
(See Packaging Information).
FEATURES  DIRECT REPLACEMENT FOR INTERSIL 2N4351  HIGH DRAIN CURRENT  HIGH GAIN  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  ID = 100mA   gfS = 1000µS  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  LS4351 Features: Maximum Power Dissipation  Continuous Power Dissipation   ƒ Low ON Resistance MAXIMUM CURRENT ƒ Low Capacitance Drain to Source (Note 1)  ƒ High Gain MAXIMUM VOLTAGES  ƒ High Gate Breakdown Voltage Drain to Body  ƒ Low Threshold Voltage Drain to Source  Peak Gate to Source (Note 2)  LS4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  BVDSS  Drain to Source Breakdown Voltage  25  ‐‐  ‐‐    V  VDS(on)  Drain to Source “On” Voltage  ‐‐  ‐‐  1  VGS(th)  Gate to Source Threshold Voltage  1  ‐‐  5  IGSS  Gate Leakage Current  ‐‐  ‐‐  10  pA  IDSS  Drain Leakage Current “Off”  ‐‐  ‐‐  10  nA  ID(on)  Drain Current “On”  3  ‐‐  ‐‐  mA  gfs  Forward Transconductance  1000  ‐‐  ‐‐  µS  rDS(on)  Drain to Source “On” Resistance  ‐‐  ‐‐  300  Ω  ‐65°C to +200°C  ‐55°C to +150°C  375mW  100mA  25V  25V  ±125V  CONDITIONS  ID = 10µA,   VGS = 0V                     ID = 2mA,   VGS = 10V  VDS = 10V,    ID = 10µA  VGS = ±30V,   VDS = 0V  VGS = 10V,   VDS = 10V  VGS = 10V,  VDS = 10V  VDS = 10V,    ID = 2mA ,   f = 1MHz  VGS = 10V,   ID = 0A,   f = 1kHz  www.
DataSheet4U.
com Crss  Reverse Transfer Capacitance  ‐‐  ‐‐  1.
3    VDS = 0V,     VGS = 0V ,   f = 140kHz  pF  Ciss  Input Capacitance  ‐‐  ‐‐  5  VDS = 10V,     VGS = 0V ,   f = 140kHz  Cdb  Drain to Body Capacitance  ‐‐  ‐‐  5.
0  VDB = 10V,   f = 140kHz                SWITCHING CHARACTERISTICS...


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