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LS3N171

Micross
Part Number LS3N171
Manufacturer Micross
Description High Speed Switch
Published Jun 13, 2011
Detailed Description LS3N171 N-CHANNEL MOSFET The LS3N171 is an enhancement mode N-Channel Mosfet The LS3N171 is an enhancement mode N-Chann...
Datasheet PDF File LS3N171 PDF File

LS3N171
LS3N171


Overview
LS3N171 N-CHANNEL MOSFET The LS3N171 is an enhancement mode N-Channel Mosfet The LS3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
(See Packaging Information).
FEATURES  DIRECT REPLACEMENT FOR INTERSIL LS3N171  LOW DRAIN TO SOURCE RESISTANCE  FAST SWITCHING  ABSOLUTE MAXIMUM RATINGS (Note 1)  @ 25°C (unless otherwise noted)  rDS(on) ≤ 200Ω  td(on) ≤ 3.
0ns  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  LS3N171 Features: Maximum Power Dissipation  Continuous Power Dissipation   ƒ Low ON Resistance MAXIMUM CURRENT ƒ Low Capacitance Drain to Source   ƒ High Gain MAXIMUM VOLTAGES  ƒ High Gate Breakdown Voltage Drain to Gate  ƒ Low Threshold Voltage Drain to Source  Peak Gate to Source     LS3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  BVDSS  Drain to Source Breakdown Voltage  25  ‐‐  ‐‐    V  VDS(on)  Drain to Source “On” Voltage  ‐‐  ‐‐  2.
0  VGS(th)  Gate to Source Threshold Voltage  1.
5  ‐‐  2.
0  IGSS  Gate Leakage Current  ‐‐  ‐‐  10  pA  IDSS  Drain Leakage Current “Off”  ‐‐  ‐‐  10  nA  ID(on)  Drain Current “On”  10  ‐‐  ‐‐  mA  gfs  Forward Transconductance  1000  ‐‐  ‐‐  µS  rDS(on)  Drain to Source “On” Resistance  ‐‐  ‐‐  200  Ω  ‐65°C to +150°C  ‐55°C to +135°C  300mW  30mA  ±35V  25V  ±35V    CONDITIONS  ID = 10µA,   VGS = 0V                     ID = 10mA,   VGS = 10V  VDS = 10V,    ID = 10µA  VGS = ‐35V,   VDS = 0V  VGS = 10V,   VDS = 10V  VGS = 10V,  VDS = 10V  VDS = 10V,    ID = 2mA ,   f = 1kHz  VGS = 10V,   ID = 0A,   f = 1kHz  www.
DataSheet4U.
com Crss  Reverse Transfer Capacitance  ‐‐  ‐‐  1.
3    VDS = 0V,     VGS = 0V ,   f = 1MHz  pF  Ciss  Input Capacitance  ‐‐  ‐‐  5  VDS = 10V,     VGS = 0V ,   f = 1MHz  Cdb  Drain to Body Capacitance  ‐‐  ‐‐  5.
0  VDB = 10V,   f = 1MHz                ...


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