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LS3N166

Micross
Part Number LS3N166
Manufacturer Micross
Description Amplifier
Published Jun 13, 2011
Detailed Description LS3N166 P-CHANNEL MOSFET The LS3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMEN...
Datasheet PDF File LS3N166 PDF File

LS3N166
LS3N166


Overview
LS3N166 P-CHANNEL MOSFET The LS3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL LS3N166  ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  Maximum Temperatures  The hermetically sealed TO-78 package is well suited Storage Temperature  ‐65°C to +200°C  for high reliability and harsh environment applications.
Operating Junction Temperature  ‐55°C to +150°C  Lead Temperature (Soldering, 10 sec.
)  +300°C  (See Packaging Information).
Maximum Power Dissipation  Continuous Power Dissipation (one side)  300mW  LS3N166 Features: Total Derating above 25°C 4.
2 mW/°C  MAXIMUM CURRENT ƒ Very high Input Impedance Drain Current  50mA  ƒ Low Capacitance MAXIMUM VOLTAGES  ƒ High Gain ƒ High Gate Breakdown Voltage Drain to Gate or Drain to Source2  ‐30V  ƒ Low Threshold Voltage Peak Gate to Source3 ±125V  Gate‐Gate Voltage  ±80V  LS3N166 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  CONDITIONS  IGSSR  Gate Reverse Leakage Current  ‐‐  ‐‐  10    VGS = ‐0V    IGSSF  Gate Forward Current   ‐‐  ‐‐  ‐10  VGS = ‐40V  pA    TA= +125°C  ‐‐  ‐‐  ‐25  IDSS  Drain to Source Leakage Current  ‐‐  ‐‐  ‐200  VDS = ‐20V  ISDS  Source to Drain Leakage Current  ‐‐  ‐‐  ‐400  VSD = ‐20V  VDB = 0  ID(on)  Drain Current “On”  ‐5.
0  ‐‐  ‐30  mA  VDS = ‐15V,  VGS = ‐10V  VGS(th)  Gate to Source Threshold Voltage  ‐2.
0  ‐‐  ‐5.
0  V  VDS = ‐15V,   ID = ‐10µA  ‐2.
0  ‐‐  ‐5.
0  VDS =  VGS ,   ID = ‐10µA  rDS(on)  Drain to Source “On” Resistance  ‐‐  ‐‐  300  Ω  VGS = ‐20V,   ID = ‐100µA  gfs  Forward Transconductance  1500  ‐‐  3000  µS  VDS = ‐15V,    ID = ‐10mA ,   f = 1kHz  The LS3N166 is a dual enhancement mode P-Channel Mosfet and is ideal for space constrained applications and those requiring tight electrical matching.
gos  Ciss  Crss  Coss  RE(Yfs)  www.
DataSheet4U.
com  Input Capacitance  ‐‐  ‐‐  3      pF  VDS = ‐15V,    ID = ‐10mA ,   f = 1MHz4  Reverse Transfer Capacitance  ‐‐ ...


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