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LS3N164

Micross
Part Number LS3N164
Manufacturer Micross
Description High Speed Switch
Published Jun 13, 2011
Detailed Description LS3N164 P-CHANNEL MOSFET The LS3N164 is an enhancement mode P-Channel Mosfet The LS3N164 is an enhancement mode P-Chann...
Datasheet PDF File LS3N164 PDF File

LS3N164
LS3N164


Overview
LS3N164 P-CHANNEL MOSFET The LS3N164 is an enhancement mode P-Channel Mosfet The LS3N164 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
FEATURES  DIRECT REPLACEMENT FOR INTERSIL LS3N164  ABSOLUTE MAXIMUM RATINGS1  @ 25°C (unless otherwise noted)  ‐65°C to +200°C  ‐55°C to +150°C  375mW  50mA  Maximum Temperatures  Storage Temperature  (See Packaging Information).
Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   LS3N164 Features: MAXIMUM CURRENT ƒ Very high Input Impedance Drain Current  ƒ Low Capacitance MAXIMUM VOLTAGES  ƒ High Gain Drain to Gate  ƒ High Gate Breakdown Voltage Drain to Source  ƒ Low Threshold Voltage Peak Gate to Source2 LS3N164 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  IGSSF  Gate Forward Current   ‐10  ‐‐  ‐‐  pA    TA= +125°C  ‐‐  ‐‐  ‐25  BVDSS  Drain to Source Breakdown Voltage  ‐30  ‐‐  ‐‐      BVSDS  Source‐Drain Breakdown Voltage  ‐30  ‐‐  ‐‐  V  VGS(th)  Gate to Source Threshold Voltage  ‐2.
0  ‐‐  ‐5.
0  ‐2.
0  ‐‐  ‐5.
0  VGS  Gate Source Voltage  ‐3.
0  ‐‐  ‐6.
5  IDSS  Drain Leakage Current “Off”  ‐‐  ‐‐  200  pA  ISDS  Source Drain Current  ‐‐  ‐‐  400  rDS(on)  Drain to Source “On” Resistance  ‐‐  ‐‐  250  Ω  ID(on)  Drain Current “On”  ‐5.
0  ‐‐  ‐30  mA  gfs  Forward Transconductance  2000  ‐‐  4000  µS  gos  Output Admittance  ‐‐  ‐‐  250  www.
DataSheet4U.
com ‐30V  ‐30V  ±125V  CONDITIONS  VGS = ‐30V,   VDS = 0V  ID = ‐10µA,   VGS = 0V  IS = ‐10µA, VGD = 0V,  VBD = 0V  VDS =  VGS ,    ID = ‐10µA  VDS = ‐15V,   ID = ‐10µA  VDS = ‐15V,   ID = ‐0.
5mA  VDS = ‐15V,   VGS = 0V  VDS = 15V,   VGS =  VDB = 0V  VGS = ‐20V,   ID = ‐100µA  VDS = ‐15V,  VGS = ‐10V  VDS = ‐15V,    ID = ‐10mA ,   f = 1kHz  Ciss   Input Capacitance–Output shorted  ‐‐  ‐‐  2.
5      3 pF  VDS = ‐15V,    ID ...


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