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LS3954A

Micross
Part Number LS3954A
Manufacturer Micross
Description Low Noise
Published Jun 13, 2011
Detailed Description LS3954A MONOLITHIC DUAL N-CHANNEL JFET The LS3954A is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LS3954...
Datasheet PDF File LS3954A PDF File

LS3954A
LS3954A



Overview
LS3954A MONOLITHIC DUAL N-CHANNEL JFET The LS3954A is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LS3954A family are matched JFET pairs for differential amplifiers.
The LS3954A family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The LS3954A family exhibits low capacitance - 6pF max and a spot noise figure of - 0.
5dB max.
The part offers a superior tracking ability.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES  LOW DRIFT  LOW LEAKAGE  LOW NOISE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  |∆ VGS1‐2 /∆T|= 5µV/°C max.
IG = 20pA TYP.
  en = 10nV/√Hz TYP.
  LS3954A Applications: ƒ ƒ Wideband Differential Amps High Input Impedance Amplifiers Maximum Temperatures  Storage Temperature  ‐65°C to +200°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  60V  ‐VDSO  Drain to Source Voltage  60V  ‐IG(f)  Gate Forward Current  50mA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 400mW @ 25°C    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.
  DRIFT VS.
  5  µV/°C  VDG=20V, ID=200µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.
  OFFSET VOLTAGE  5  mV  VDG=20V, ID=200µA  MAX.
  ‐‐  ‐‐    3000  1000  3    5  5    4.
5  4    50  50  ‐‐  100    5  1  0.
1    ‐‐  ‐‐    0.
5  15    6  2  ‐‐  UNITS  V  V    µmho  µmho  %    mA  %    V  V    pA  nA  pA  pA    µmho  µmho  µmho    dB  dB    dB  nV/√Hz    pF  pF  pF  CONDITIONS  VDS = 0                  ID=1µA        I G= 1nA               ID= 0               IS= 0    VDG= 20V         VGS= 0V      f = 1kHz       VDG= 20V         ID= 200µA          VDG= 20V              VGS= 0V      VDS= 20V     ...



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