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IXFN48N55

IXYS Corporation
Part Number IXFN48N55
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, H...
Datasheet PDF File IXFN48N55 PDF File

IXFN48N55
IXFN48N55

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.
6 mm (0.
63 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C IXFN 48N55 VDSS = ID25 = RDS(on) = trr £ 250 ns 550 V 48 A 110 mW D G S S Maximum Ratings 550 550 ±20 ±30 48 192 44 60 3 5 600 -55 .
.
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+150 150 -55 .
.
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+150 2500 3000 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low ...


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