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C2026

Inchange Semiconductor
Part Number C2026
Manufacturer Inchange Semiconductor
Description 2SC2026
Published May 2, 2011
Detailed Description INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF=...
Datasheet PDF File C2026 PDF File

C2026
C2026

Overview
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.
0dB TYP.
@ f= 500MHz ·High Power Gain Gpe= 15dB TYP.
@ f= 500MHz ·High Gain Bandwidth Product fT= 2.
0GHz TYP.
APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.
25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ www.
DataSheet4U.
com isc Website：www.
iscsemi.
...


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