N-CHANNEL POWER MOSFET - Unisonic Technologies
Description
UNISONIC TECHNOLOGIES CO.
, LTD 11N90
11A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.
This technology specializes in allowing a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 11N90 is universally applied in high efficiency switch mode power supply,
FEATURES
* RDS(on) < 1.
1Ω @ VGS = 10V, ID = 5.
5A * High switching speed * Improved dv/dt capability * 100% avalanche tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
11N90L-TA3-T
11N90G-TA3-T
TO-220
11N90L-TF1-T
11N90G-TF1-T
TO-220F1
11N90L-TF2-T
11N90G-TF2-T
TO-220F2
11N90L-T3P-T
11N90G-T3P-T
TO-3P
11N90L-T3N-T
11N90G-T3N-T
TO-3PN
11N90L-T47-T
11N90G-T47-T
TO-247
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS GDS GDS GDS
Packing
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www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd
1 of 7
QW-R502-497.
F
11N90
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO.
, LTD
www.
unisonic.
com.
tw
2 of 7
QW-R502-497.
F
11N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900 V
Gate-Source Voltage Drain Current Avalanche Energy
Continuous Pulsed (Note 1) Single Pulsed (Note 2)
VGSS ID IDM EAS
±30 11 44 1000
V A A mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.
0 V/ns
TO-220
160 W
Power Dissipation
TO-220F1/TO-220F2 TO-3P/TO-3PN
PD
50 W 215 W
TO-247
190 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implie...
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