160V - SOT223 / NPN high voltage transistor - Diodes
Description
ZXTN5551G 160V, SOT223, NPN high voltage transistor
Summary
BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 2W Complementary part number ZXTP5401G
Description
A high voltage NPN transistor in a high power dissipation surface mount package
C
Features
• • 160V rating SOT223 package
B
E
Applications
• High voltage amplification
E C
Tape width (mm) 12 12 Quantity per reel 1000 4000
Ordering information
Device ZXTN5551GTA ZXTN5551GTC Reel size (inches) 7 13
C B Pinout - top view
Device marking
ZXTN 5551
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ZXTN5551G
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Power dissipation at TA = 25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC PD Limit 180 160 6 600 2 16 -55 to 150 Unit V V V mA W mW/°C °C
Thermal resistance
Parameter Junction to ambient(a) Symbol R⍜JA Value 62.
5 Unit °C/W
NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.
6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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ZXTN5551G
Characteristics
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ZXTN5551G
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter Symbol Min.
180 160 Typ.
270 200 Max.
Unit V V Conditions IC = 100A IC = 1mA (*) IE = 10A VCB = 120V VCB = 120V, Tamb= 100°C IC = 10mA, IB = 1mA (*) IC = 50mA, IB = 5mA (*) IC = 10mA, IB = 1mA (*) IC = 50mA, IB = 5mA (*) IC = 1mA, VCE = 5V (*) 250 IC = 10mA, VCE = 5V (*) IC = 50mA, VCE = 5V (*) MHz 6 50 95 64 1256 140 260 ns ns ns ns pF IC = 10mA, VCE = 10V f = 100MHz VCB = 10V, f = 1MHz (*) IC = 10mA, VCE = 10V, f=1kHz (†) Delay time Rise time Storage time Fall time t(d) t(r) t(s) t(f) VCC = 10V.
IC = 10mA, ...
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