N-Channel MOSFET - Chino-Excel Technology
Description
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 25A, RDS(ON) = 50mΩ @VGS = 10V.
RDS(ON) = 53mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED540L/CEU540L
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100
Units V V A A W W/ C C
±20
25 100 56 0.
45 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
2 50 Units C/W C/W
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Specification and data are subject to change without notice .
1
Rev .
1 2010.
April.
http://www.
cetsemi.
com
CED540L/CEU540L
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 18A VDS = 80V, ID = 18A, VGS = 10V VDD = 50V, ID = 18A, VGS = 10V, RGEN = 5.
1Ω 13 3.
1 55 5 40 3.
7 10 25 1.
3 26 7 110 10 80 ns ns ns ns nC nC nC A V
c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VG...
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