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CET04N10

Chino-Excel Technology
Part Number CET04N10
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280...
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CET04N10
CET04N10

Overview
CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V.
RDS(ON) = 280mΩ @VGS = 6V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D D G SOT-223 D S G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 100 Units V V A A W C ±20 3 12 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W www.
DataSheet4U.
com Details are subject to change without notice.
1 Rev2.
2010.
Sep.
http://www.
cetsemi.
com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On C...


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