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P2010DN

Fairchild Semiconductor
Part Number P2010DN
Manufacturer Fairchild Semiconductor
Description FYP2010DN
Published Jan 27, 2011
Detailed Description FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring fo...
Datasheet PDF File P2010DN PDF File

P2010DN
P2010DN


Overview
FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1.
Anode 2.
Cathode 3.
Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 20 150 -65 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 1.
7 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.
77 0.
65 0.
75 mA 0.
1 20 Units V IRM * * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2002 Fairchild Semiconductor Corporation Rev.
A, September 2002 www.
DataSheet.
in FYP2010DN Typical Characteristics 100 10 Forward Current, I F[A] 10 Reverse Current, IR[mA] 1 T J=125 C o 1 0.
1 TJ=75 C o TJ=125 C 0.
1 o TJ=75 C TJ=25 C o o 0.
01 T J=25 C o 0.
01 0.
0 1E-3 0.
5 1.
0 1.
5 20 40 60 80 100 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Figure 1.
Typical Forward Voltage Characteristics (per diode) Figure 2.
Typical Reverse Current vs.
Reverse Voltage (per diode) 10 1000 900 800 700 600 500 400 300 200 TJ=25 C o Transient Thermal Impedance [ C/W] Juntion Capacitance, C J[pF] o 1 100 90 80 0 20 40 60 80 100 100µ 1m 10m 100m 1 10 Reverse Voltage, VR[V] Pulse Duration [s] Figure 3.
Typical Junction Capacitance (per diode) Figure 4.
Thermal Impedance Characteristics (per diode) 25 250 Average ...


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