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BSD314SPE

Infineon Technologies AG
Part Number BSD314SPE
Manufacturer Infineon Technologies AG
Description 3 Small-Signal-Transistor
Published Jan 23, 2011
Detailed Description BSD314SPE OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD...
Datasheet PDF File BSD314SPE PDF File

BSD314SPE
BSD314SPE


Overview
BSD314SPE OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.
5V rated) • ESD protected • Qualified according AEC Q101 • 100% Lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=-10 V V GS=-4.
5 V ID 30 140 230 -1.
5 PG-SOT-363 6 5 4 V mΩ A 1 2 3 Type BSD314SPE Package PG-SOT-363 Tape and Reel Information L6327: 3000 pcs/ reel Marking XDs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=-1.
5A, R GS=25 Ω I D=-1.
5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C Value -1.
5 -1.
2 -6.
1 6 mJ Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg JESD22-A114 -HBM T A=25 °C ±20 0.
5 -55 .
.
.
150 2 (2kV to 4kV) 260 °C 55/150/56 V W °C °C °C Rev 2.
1 page 1 2010-03-29 www.
DataSheet.
in BSD314SPE Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - ambient R thJA 1) Values typ.
max.
Unit minimal footprint - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics V (BR)DSS V GS= 0V, I D=-250µA V GS(th) I DSS V DS=VGS, I D=-6.
3µA V DS=-30V, V GS=0 V, T j=25 °C V DS=-30V, V GS=0V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20V, V DS=0V V GS=-4.
5V, I D=-1.
2A V GS=-10V, I D=-1.
5A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.
2 A Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current -30 -1 - -1.
5 - -2 -1 V µA - 153 107 3 -100 -5 230 140 S µA mΩ Performed on 40mm2 FR4 PCB.
The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB.
1) Rev 2.
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