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4835P

Anachip Corporation
Part Number 4835P
Manufacturer Anachip Corporation
Description AF4835P
Published Jan 21, 2011
Detailed Description AF4835P P-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low On-resistance - Fast Switchi...
Datasheet PDF File 4835P PDF File

4835P
4835P


Overview
AF4835P P-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low On-resistance - Fast Switching „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
ID (A) -8 „ Product Summary BVDSS (V) -30 RDS(ON) (mΩ) 20 „ Pin Assignments S S S G 1 2 3 4 8 7 6 5 „ Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SOP-8 „ Ordering information A X Feature F :MOSFET PN 4835P X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information.
Anachip Corp.
reserves the rights to modify the product specification without notice.
No liability is assumed as a result of the use of this product.
No rights under any patent accompany the sale of the product.
Rev.
1.
2 Nov 19, 2004 1/6 www.
DataSheet.
in AF4835P P-Channel Enhancement Mode Power MOSFET „ Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC Rating -30 ±20 -8 -6 -50 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC „ Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max.
Maximum 50 Units ºC/W „ Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold...



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