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KM736V799

Samsung Semiconductor
Part Number KM736V799
Manufacturer Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
Published Jan 12, 2011
Detailed Description KM736V799 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. N...
Datasheet PDF File KM736V799 PDF File

KM736V799
KM736V799

Overview
KM736V799 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.
No 0.
0 0.
1 History Initial draft Change Undershoot spec from -3.
0V(pulse width≤20ns) to -2.
0V(pulse width≤tCYC/2) Add Overshoot spec 4.
6V(pulse width≤tCYC/2) Change VIH max from 5.
5V to VDD+0.
5V Change tCD from 3.
2ns to 3.
1ns at bin -50.
Change tOE from 3.
2ns to 3.
1ns at bin -50.
Change setup from 1.
5ns to 1.
4ns at bin -50.
Change tCYC from 5.
5ns to 5.
4ns at bin -55.
Change tCD from 3.
5ns to 3.
1ns at bin -55.
Change tOE from 3.
5ns to 3.
1ns at bin -55.
Change setup from 1.
5ns to 1.
4ns at bin -55.
Add tCYC 175Mhz.
Change ISB2 from 20mA to 30mA.
Modify DC characteristics( Input...


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